Artikel Jurnal :: Kembali

Artikel Jurnal :: Kembali

The Influence of silane gas flow rate on optoelectronic properties of Uc-Si: H Prepared by HWC-VHF-PECVD Technique

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 Abstrak

Hydrogenated microcrystalline silicon (Uc-Si:H) thin films have been deposited using 10 % silane (SiH4) in H2 dilution by Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HWC-VHF-PECVD) technique.....

 Metadata

Jenis Koleksi : Artikel Jurnal
No. Panggil : ITJOSCI
Subjek :
Sumber Pengatalogan :
ISSN :
Majalah/Jurnal : ITB Journal of Science 40 (2) Sep 2008 : 130-137
Volume :
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Akses Elektronik :
Institusi Pemilik :
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ITJOSCI TERSEDIA
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