Investigation of annealing effect on the forward bias and leakage current changes of P-Type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated UP To 1.75 MGY (Application for nuclear fuel elements facilities)
([Publisher not identified]
, [Date of publication not identified]
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| Jenis Koleksi : | Artikel Jurnal |
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| Majalah/Jurnal : | Urania Jurnal Ilmiah Daur Bahan Bakar Nuklir 15 (1) Jan 2009 : 20 - 24 |
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