Artikel Jurnal :: Back

Artikel Jurnal :: Back

Simulasi model : Heterojunction bipolar transistor silikon - germanium (HBT SiGe) berdasarkan pengaturan lebar stripe emiter (We)

([Publisher not identified] , [Date of publication not identified] )

 Abstract

Si-Ge HBTs is an electronic device having important role in developing Information and Telecommunication Technology. It can be shown by the superior performance of threshold frequency (fr) oscillation frequency (fosc) current gain (B) and minimum noise figure (Fn)....

 Metadata

Collection Type : Artikel Jurnal
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Magazine/Journal : Jurnal Penelitian dan Pengembangan Telekomunikasi 14 (1) Jun 2009 : 40 - 45
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TERSEDIA
Review:
No review available for this collection: 129449
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