[ABSTRAK
Sampai saat ini studi tentang efek individualitas dopant terhadapkarakteristik piranti berdimensi nanometer, hanya dilakukan pada pirantiberstruktur MOSFET, tetapi tidak dilakukan pada struktur pn junction. Tujuandari riset ini adalah menginvestigasi efek dari sebuah atom dopant (individualitasdopant) terhadap karakteristik arus-tegangan pada piranti pn junction Silikonberdimensi nanometer. Dua macam piranti pn junction dengan konsentrasi dopingyang berbeda telah berhasil difabrikasi. Karakteristik arus-tegangan kemudiandiobservasi pada berbagai suhu. Sebagai hasilnya, pada suhu rendah, ditemukanadanya fitur random telegraph signal (RTS) dan/atau fitur multi-tingkat,tergantung dari konsentrasi doping, yang merupakan efek dari adanyaindividualitas dopant terhadap karakteristik piranti pn junction.;

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ABSTRACT
So far, studies about effects of dopant individuality on characteristic ofnanodevice have been done only for nanodevice in MOSFET structure, but not forpn junction structure. Purpose of this study is to investigate effects of dopantsindividuality on current-voltage (I-V) characteristics in nanoscale Si pn junctiondevices. Two types of devices, which have different doping concentration, havebeen fabricated. Then, I-V characteristics have been observed under severaltemperatures. As a result, at low temperatures, random telegraphs signal (RTS)and multistep features have been found, which caused by effect of dopantsindividuality on characteristics of pn junction device., So far, studies about effects of dopant individuality on characteristic ofnanodevice have been done only for nanodevice in MOSFET structure, but not forpn junction structure. Purpose of this study is to investigate effects of dopantsindividuality on current-voltage (I-V) characteristics in nanoscale Si pn junctiondevices. Two types of devices, which have different doping concentration, havebeen fabricated. Then, I-V characteristics have been observed under severaltemperatures. As a result, at low temperatures, random telegraphs signal (RTS)and multistep features have been found, which caused by effect of dopantsindividuality on characteristics of pn junction device.]