UI - Disertasi Membership :: Kembali

UI - Disertasi Membership :: Kembali

Efek individualitas dopant terhadap karakteristik arus tegangan pada piranti pn junction berdimensi nanometer = effect of dopants individuality on current voltage i v characteristics in nanoscale pn junctions / Sri Purwiyanti

Sri Purwiyanti; ([Publisher not identified] , 2014)

 Abstrak

[ABSTRAK
Sampai saat ini studi tentang efek individualitas dopant terhadap
karakteristik piranti berdimensi nanometer, hanya dilakukan pada piranti
berstruktur MOSFET, tetapi tidak dilakukan pada struktur pn junction. Tujuan
dari riset ini adalah menginvestigasi efek dari sebuah atom dopant (individualitas
dopant) terhadap karakteristik arus-tegangan pada piranti pn junction Silikon
berdimensi nanometer. Dua macam piranti pn junction dengan konsentrasi doping
yang berbeda telah berhasil difabrikasi. Karakteristik arus-tegangan kemudian
diobservasi pada berbagai suhu. Sebagai hasilnya, pada suhu rendah, ditemukan
adanya fitur random telegraph signal (RTS) dan/atau fitur multi-tingkat,
tergantung dari konsentrasi doping, yang merupakan efek dari adanya
individualitas dopant terhadap karakteristik piranti pn junction.;

ABSTRACT
So far, studies about effects of dopant individuality on characteristic of
nanodevice have been done only for nanodevice in MOSFET structure, but not for
pn junction structure. Purpose of this study is to investigate effects of dopants
individuality on current-voltage (I-V) characteristics in nanoscale Si pn junction
devices. Two types of devices, which have different doping concentration, have
been fabricated. Then, I-V characteristics have been observed under several
temperatures. As a result, at low temperatures, random telegraphs signal (RTS)
and multistep features have been found, which caused by effect of dopants
individuality on characteristics of pn junction device., So far, studies about effects of dopant individuality on characteristic of
nanodevice have been done only for nanodevice in MOSFET structure, but not for
pn junction structure. Purpose of this study is to investigate effects of dopants
individuality on current-voltage (I-V) characteristics in nanoscale Si pn junction
devices. Two types of devices, which have different doping concentration, have
been fabricated. Then, I-V characteristics have been observed under several
temperatures. As a result, at low temperatures, random telegraphs signal (RTS)
and multistep features have been found, which caused by effect of dopants
individuality on characteristics of pn junction device.]

 Metadata

Jenis Koleksi : UI - Disertasi Membership
No. Panggil : D1982
Entri utama-Nama orang :
Entri tambahan-Nama badan :
Program Studi :
Penerbitan : [Place of publication not identified]: [Publisher not identified], 2014
Bahasa : ind
Sumber Pengatalogan : LibUI ind rda
Tipe Konten : text
Tipe Media : unmediated ; computer
Tipe Carrier : volume ; online resource
Deskripsi Fisik : x, 69 pages : illustration ; 28 cm + appendix
Naskah Ringkas :
Lembaga Pemilik : Universitas Indonesia
Lokasi : Perpustakaan UI, Lantai 3
  • Ketersediaan
  • Ulasan
  • Sampul
No. Panggil No. Barkod Ketersediaan
D1982 TERSEDIA
Ulasan:
Tidak ada ulasan pada koleksi ini: 20404479
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