Contents :- Session 1: Advanced Techniques - Scanning Magnetoresistive Microscopy for Die-Level Sub-Micron Current Density Mapping - High Resolution Current Imaging by Direct Magnetic Field Sensing - Fault Isolation of High Resistance Defects using Comparative Magnetic Field Imaging - High Resolution Backside Thermography using a Numerical Aperture Increasing Lens - Session 2: Optical Techniques - Study of Critical Factors Determining Latchup Sensitivity of ICs using Emission Microscopy - New Applications of Thermal Laser Signal Injection Microscopy (T-LSIM) - PC Card Based Optical Probing of Advanced Graphics Processor using Time Resolved Emission - Time-Resolved Optical Measurements from 0.13μm CMOS Technology Microprocessor using a Superconducting Single-Photon Detector - IC Diagnostic with Time Resolved Photon Emission and CAD Auto-channeling - Session 3: Package Level Analysis 1 - 3D X-ray Computed Tomography (CT) for Electronic Packages - High-Angle Electron Microscopy Technique for Analysis of Thin Film Contamination on IC Package Exteriors - Solder Bump Defects in Ceramic Flip Chip Packages and Their Acoustic Signatures. - Copper Bond over Active Circuit (BOAC) and Copper over Anything (COA) Failure Analysis - Investigation of Bond-pad Related Inter-metal Dielectric Crack - Session 4: Sample Preparation 1 - Enhanced SEM Doping Contrast - Interconnect and Gate Level Delayering Techniques for Cu/Low k Technology Failure Analysis - Backside Deprocessing of CMOS SOI Devices for Physical Defect and Failure Analysis - A Novel Approach to Front-side Deprocessing for Thinned Die after Backside Failure Isolation - Session 5: System Level Analysis - Dynamic Infrared System Level Fault Isolation - X-ray Laminography Benchmarking and Failure Analysis of Solder Joint Interfaces - XRF Correlation of Board Reseats due to Intermittent Failures from the use of Thin Gold Plating finish on the Contact Fingers - Session 6: Metrology and Materials Analysis 1 - Deal Time SEM Imaging of FIB Milling Processes for Extended Accuracy on TEM Samples for EFTEM Analysis - A Method for Exact Determination of Dram Deep Trench Surface Area - A Review of TEM Observations of Failures of the Memory Cell in a Deep Trench Capacitor DRAM - The Effect of Tem Specimen Preparation Method on Ultra-thin Gate Dielectric Analysis - Forward Scattered Scanning Electron Microscopy for Semiconductor Metrology and Failure Analysis - Session 7: Failure Analysis Process - Contributions of a Formal Analysis Metaprocess to Breakthrough Failure Analysis Results - SRAM Failure Analysis Strategy - VLSI Design for Functional Failure Analysis in the < 90 nm and Flip-chip era - Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques - Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement - Session 8: Metrology and Materials Analysis 2 - Contact Failure due to Particulate Defect in a 0.13 μm CMOS Process - Microhardness Testing on Via Fill Material for Via In Pad Technology - Application of ToF-SIMS to Airborne Organic Contamination Analysis - Session 9: Test 1 - Yield-Modeling and Test Oriented Taxonomy of IC Structure Deformations - Analysis of IC Manufacturing Process Deformations: An Automated Approach Using SRAM Bit Fail Maps - Electrical Failure Analysis and Characterization of Leakage Paths Leading to Single Cell Failures in 128Mbit SDRAMs - Session 10: Poster - A Study on Fluorine-Induced Corrosion on Microchip Aluminum Bondpads - Advanced Process Defect Detection by Using Dynamic Bias Condition and MCT Camera - Via Chain Failure Analysis Using a Combination of E-Beam and Optical Beam Techniques - ESD Failure Signature Differences in the Devices Core Logic and Protection Structures -- A Case Study - ESD: Correlation between Electrical Signature and Failure Modes - Semi-Automated Cross-Section Process for Complti-Face Perimeter Samples - FIB Micro-pillar sampling of Si devices and its 3D observation - Recent Developments in Automated Sample Preparation for FESEM - Wet Delineation of SEM Samples having Cu Interconnects - An Evolution in Plastic Decapsulation Process Improvement - Near IR Continuous Wavelength Spectroscopy of Photon Emissions from Semiconductor Devices - Defect Isolation and Characterization in Contacts by Using Primary Voltage Adjustment