Fabrication of GaAs devices

Albert G. Baca and Carol I.H. Ashby (Institution of Engineering and Technology, 2009)

Contents :

- Acknowledgment

- Abbreviations

- Chapter 1: Introduction to GaAs devices

- Chapter 2: Semiconductor properties, growth, characterisation and

processing techniques

- Chapter 3: Cleaning and passivation of GaAs and related alloys

- Chapter 4: Wet etching and photolithography of GaAs and related alloys

- Chapter 5: Dry etching of GaAs and related alloys

- Chapter 6: Ohmic contacts

- Chapter 7: Schottky contacts

- Chapter 8: Field effect transistors

- Chapter 9: Heterojunction bipolar transistors

- Chapter 10: Wet oxidation for optoelectronic and MIS GaAs devices

- Glossary

- Index

Shelf

Fabrication of gaas devices (EMIS processing series 6).pdf :: Unduh

Jenis Koleksi :	eBooks
No. Panggil :	e20452668
Entri utama-Nama orang :	Baca, Albert G., author


Entri tambahan-Nama orang :	Ashby, Carol I.H., author



Subjek :	Gallium arsenide semiconductors
Penerbitan :	London: Institution of Engineering and Technology, 2009

Sumber Pengatalogan:	LibUI eng rda
Tipe Konten:	text
Tipe Media:	computer
Tipe Pembawa:	online resources
Deskripsi Fisik:	xvii, 350 pages : illustration
Tautan:	http://portal.igpublish.com/iglibrary/search/IETB0000094.main.html?2
Lembaga Pemilik:
Lokasi:

No. Panggil	No. Barkod	Ketersediaan
e20452668	02-17-164251825	TERSEDIA

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