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"This book presents the basic techniques available to design low power RF CMOS analogue circuits. It gives circuit designers a complete guide of alternatives to optimize power consumption and explains the application of these rules in the most common RF building blocks, LNA, mixers and PLLs. It is set out using practical examples and offers a unique perspective as it targets designers working within the standard CMOS process and all the limitations inherent in these technologies."

"Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation. "

"This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques. Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems. Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice. Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS. Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples."

"This new book demonstrates how FGMOS transistors can be used in a low voltage and low power design context. The techniques used provide innovative solutions, often in situations where the limits of the technology in question have been pushed far below the values recommended by the manufacturer.Motivated by consumer demand for smaller, more portable electronic devices, which offer more features and operate for longer on their existing battery packs, cutting edge electronic circuits need to be even more power efficient. This requires the circuit designer to have an understanding of the latest low voltage and low power (LV/LP) techniques which makes use of the floating gate MOS (FGMOS) transistor."

"Analog circuit design contains the contribution of 18 tutorials of the 20th workshop on advances in analog circuit design. Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design."

"Pada skripsi ini dilakukan perancangan co-design quadband LNA dan BPF dengan menggunakan CMOS teknologi 0.18 𝜇𝑚 yang beroperasi pada frekuensi tengah 0.95 GHz dan 1.85 GHz untuk aplikasi GSM, 2.35 GHz untuk aplikasi WiMAX, dan 2.65 GHz untuk aplikasi LTE secara simultan dengan topologi inductive souece degeneration. LNA dirancang agar memiliki spesifikasi 𝑆11<-10 dB, 𝑆21>10 dB, VSWR bernilai 1 ? 2, dan NF < 3 dB. LNA yang telah memenuhi kriterai perancangan kemudian digabung dengan sebuah quadband BPF yang beroperasi pada frekuensi tengah yang sama. Hasil simulasi co-design LNA dan BPF memiliki kinerja yang lebih baik daripada quadband LNA pada frekuensi 0.95 GHz, 1.85 GHz, 2.35 GHz, dan 2.65 GHz. Co-design LNA dan BPF memiliki nilai 𝑆11 antara -26,0 dan -18,9 dB, 𝑆21 antara 13,2 dB dan 19,2 dB, VSWR senilai 1,2, dan NF antara 0,6 dB dan 1,5 dB.

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In this thesis, a concurrent quadband LNA is built in inductively source degeneration topology using 0.18 𝜇𝑚 CMOS technology. Another optimization technique called co-design is also used to find the better solution in the wider design field. Whatever the LNA and Filter are powerful; there should be a better design once they are combined together. Considering multiple components in RF front-end together, co-design can reduce the device number, thereby reduce system size, weight and price. As the result, a concurrent LNA which operates in band 0.95 GHz, 1,85 GHz, 2,35 GHz, and 2,65 GHz with gain >10 dB and NF below 1 dB is presented."

"This book is based on the 18 invited tutorials presented during the 27th workshop on Advances in Analog Circuit Design. Expert designers from both industry and academia present readers with information about a variety of topics at the frontiers of analog circuit design, including the design of analog circuits in power-constrained applications, CMOS-compatible sensors for mobile devices and energy-efficient amplifiers and drivers. For anyone involved in the design of analog circuits, this book will serve as a valuable guide to the current state-of-the-art.Provides a state-of-the-art reference in analog circuit design, written by experts from industry and academia;Presents material in a tutorial-based format;Covers the design of analog circuits in power-constrained applications, CMOS-compatible sensors for mobile devices and energy-efficient amplifiers and drivers."

"Dalam perkembangan pesat teknologi informasi dan komunikasi, power amplifier memainkan peran yang sangat penting dan krusial dalam sistem komunikasi nirkabel karena merupakan komponen utama yang menentukan efisiensi dan keandalan sistem transmisi. Power amplifier mengambil daya terbesar dalam sistem transmiter, sehingga efisiensi dan keandalannya sangat mempengaruhi kinerja keseluruhan. Penelitian ini berfokus pada power amplifier kelas E yang dikenal memiliki efisiensi daya tinggi hingga 100%, menjadikannya ideal untuk aplikasi nirkabel. Frekuensi kerja 2,4 GHz sangat penting dalam teknologi komunikasi nirkabel seperti WiFi, Bluetooth Low Energy (BLE), dan Zigbee. Tujuan penelitian ini adalah merancang power amplifier kelas E dengan efisiensi tinggi pada frekuensi 2,4 GHz menggunakan simulasi dalam Advanced Design System (ADS) dari Keysight, dengan PDK TSMC RF 90 nm, tanpa implementasi fisik. Metodologi penelitian dimulai dengan studi literatur untuk memahami teori dasar dan perkembangan terkini terkait power amplifier kelas E, karakteristik transistor, matching network, dan parameter kinerja. Selanjutnya, ditentukan spesifikasi utama power amplifier dan dilakukan simulasi serta karakterisasi transistor untuk memastikan kinerja optimal. Analisis stabilitas dilakukan untuk memastikan transistor berada dalam kondisi stabil tanpa syarat. Simulasi load pull dilakukan untuk menentukan impedansi optimal yang digunakan untuk merancang matching network. Proses tuning dan optimisasi menggunakan ADS dilakukan untuk mencapai parameter kinerja yang ditargetkan. Hasil penelitian menunjukkan bahwa power amplifier kelas E yang dirancang berhasil memenuhi sebagian besar target yang ditetapkan. Pada variasi proses TT (Typical-Typical), power amplifier menunjukkan performa yang baik dengan gain sebesar 10,734 dB dan PAE sebesar 51,709%. Stabilitasnya mencapai 1,153, S21 sebesar 17,6 dB, S11 sebesar -12,218 dB, dan S22 sebesar -8,49 dB.

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In the rapid advancement of information and communication technology, the power amplifier has become a crucial component in wireless communication systems. The power amplifier consumes the most power in the transmitter system, thus its efficiency and reliability significantly affect overall performance. This research focuses on the class E power amplifier, known for its high power efficiency of up to 100%, making it ideal for wireless applications. The 2.4 GHz operating frequency is critical in wireless communication technologies such as WiFi, Bluetooth Low Energy (BLE), and Zigbee. The objective of this research is to design a high-efficiency class E power amplifier operating at 2.4 GHz using simulations in Keysight's Advanced Design System (ADS) with the TSMC RF 90 nm PDK, without physical implementation. The research methodology begins with a literature study to understand the fundamental theory and recent developments related to class E power amplifiers, transistor characteristics, matching networks, and performance parameters. Subsequently, the main specifications of the power amplifier are determined, followed by simulations and transistor characterization to ensure optimal performance. Stability analysis is conducted to ensure the transistor operates unconditionally stable. Load pull simulations are performed to determine the optimal impedance used for designing the matching network. The tuning and optimization processes using ADS are carried out to achieve the targeted performance parameters. The research results show that the designed class E power amplifier successfully meets most of the set targets. In the TT (Typical-Typical) process variation, the power amplifier demonstrates good performance with a gain of 10.734 dB and a PAE of 51.709%. Its stability factor reaches 1.153, S21 is 17.6 dB, S11 is -12.218 dB, and S22 is -8.49 dB."

"Concurrent multiband LNA merupakan salah satu tipe multiband LNA yang mampu bekerja pada beberapa frekuensi berbeda secara simultan dalam satu waktu. Pada skripsi ini dirancang concurrent multiband LNA yang bekerja pada empat pita frekuensi (quadband) yaitu 950 MHz, 1.85 GHz, 2.35 GHz, dan 2.75 GHz. LNA yang dirancang menggunakan topologi inductive source degeneration dan menggunakan teknologi CMOS 0.18 μm. Spesifikasi LNA yang dirancang adalah memenuhi standar kestabilan (K > 1), gain (S21) > 10 dB, input return loss (S11) < -10 dB, Noise figure (NF) < 3 dB, dan konsumsi daya ≤ 20 mW. Berdasarkan hasil simulasi yang dilakukan, rancangan LNA telah memenuhi spesifikasi yaitu memiliki K > 1, S21 sebesar 17.007 dB pada frekuensi 950 MHz, 15.542 dB pada frekuensi 1.85 GHz, 14.974 dB pada frekuensi 2.35 GHz, dan 14.380 dB pada frekuensi 2.75 GHz. S11 sebesar -29.261 dB pada frekuensi 950 MHz, -17.915 dB pada frekuensi 1.85 GHz, -15.325 dB pada frekuensi 2.35 GHz, dan -15.921 dB pada frekuensi 2.75 GHz. NF sebesar 0.906 dB pada frekuensi 950 MHz, 0.606 dB pada frekuensi 1.85 GHz, 0.658 dB pada frekuensi 2.35 GHz, dan 0.636 dB pada frekuensi 2.75 GHz. Besarnya konsumsi daya rangkaian adalah sebesar 20 mW. Simulasi dilakukan dengan perangkat lunak Advance Design System (ADS).

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Concurrent multiband LNA is one type of multiband LNA that works at several frequency bands one time simultaneously. This final project presents a design of Concurrent multiband LNA that works at four frequency bands (quadband) namely 950 MHz, 1.85 GHz, 2.35 GHz, and 2.75 GHz. The simulated LNA uses inductive source degeneration topology in 0.18 μm CMOS technology. The design specifications of LNA are K > 1, gain (S21) > 10 dB, input return loss (S11) < -10 dB, Noise figure (NF) < 3 dB, and power consumption ≤ 20 mW.

Based on the simulation result, the design of LNA achieves specifications; K > 1, S21 are 17.007 dB at 950 MHz, 15.542 dB at 1.85 GHz, 14.974 dB at 2.35 GHz, and 14.380 dB at 2.75 GHz. S11 are -29.261 dB at 950 MHz, -17.915 dB at 1.85 GHz, -15.325 dB at 2.35 GHz, and -15.921 dB at 2.75 GHz. NF are 0.906 dB at 950 MHz, 0.606 dB at 1.85 GHz, 0.658 dB at 2.35 GHz, dan 0.636 dB at 2.75 GHz. Power comsumption is 20 mW. Simulation performed with Advance Design System (ADS) software."