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"ABSTRAKIn this paper we show a simple and effective method for regularizing the Coulomb potential for numerical calculations of quantum mechanical problems, such as, for example, the solution of the Schrodinger equation, the expansion of charge density and others. The introduction explains why the regularization of the Coulomb potential is important. In the second part, the regularization method itself as well as its advantages and disadvantages will be described in detail. The third part demonstrates some numerical calculations for the Sulfur plus Hydrogen system using the proposed method. In the final part, the obtained results are summed up."

"Perkembangan teknologi dalam bidang nanoteknologi sangatlah berkembang pesat. Single electron transistor (SET) adalah salah satu aplikasinya. SET beroperasi menggunakan prinsip coulomb blockade. Coulomb blockade muncul pada tegangan source-drain yang sangat rendah. Coulomb blockade dapat dihilangkan dengan mengubah tegangan gate dari dalam ke luar coulomb blockade. Di luar coulomb blockade, arus dapat mengalir antara source dan drain. Pada tegangan source-drain (Vds) yang diberikan, arus SET dapat dimodulasikan dengan tegangan gate (Vg). Dengan menggeser tegangan gate, arus dapat berosilasi antara nol (coulomb blockade) dan tidak nol (no coulomb blockade). Osilasi ini dikenal dengan coulomb oscillation. Dalam skripsi ini, analisa coulomb oscillation dari single electron transistor (SET) disimulasikan dengan menggunakan perbandingan 2 tegangan bias. Yang pertama adalah tegangan bias yang melewati coulomb blockade dan yang kedua adalah tegangan bias yang tidak melewati coulomb blockade. Struktur divais SET yang digunakan adalah struktur double barrier tunnel junction (DBJT). Simulasi menggunakan Matlab R2009a. Salah satu hasil yang diperoleh dari simulasi yang dilakukan ini adalah dihasilkan puncak gunung sebesar 61.35 pA yang menggantikan lembah pada coulomb oscillation ketika menggunakan tegangan bias 0.0197 volt. Bentuk puncak gunung pada coulomb oscillation ini ditentukan oleh perbandingan tinggi dari diamonds yang dilewati oleh tegangan bias yang dibentuk dari diagram stabilitas. Tinggi diamonds pada diagram stabilitas ini ditentukan oleh besar kapasitansi, background charge, dan tegangan gate.

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Technology development in the field of nanotechnology is growing rapidly. Single Electron Transistors (SET) is one of the application. SET operates using principle of coulomb blockade. Coulomb blockade appears at very low sourcedrain voltage. The Coulomb blockade can be removed by the changing of gate voltage from inside Coulomb blockade to the outside. Outside the Coulomb blockade, a current can flow the between the source and drain. At a given sourcedrain voltage V, the SET current can be modulated by gate voltage Vg. By sweeping the gate voltage, the currents oscillate between zero (Coulomb blockade) and non-zero (no Coulomb blockade). This oscillation is known by coulomb oscillation. In this script, analysis of coulomb oscillation of single electron transistor (SET) simulated by using comparison of two bias voltage. First is bias voltage passing through the coulomb blockade and second is bias voltage that does not pass through coulomb blockade. Structure of the SET device used is the structure of double barrier tunnel junction (DBJT). Simulation uses Matlab R2009a. One of the results obtained from a this simulation is produced a mountain peak of 61.35 pA that replaces the valley on coulomb oscillation when using bias voltage 0.0197 volts. The form of the peak mountain on coulomb oscillation is determined by the ratio of the height of the diamonds that are bypassed by bias voltage which is formed of the stability diagram. Height of the diamonds on stability diagram determined by large capacitance, background charge, and gate voltage."

"This paper will review atomic -like phenomena in a semiconductor quantum dot which their size ,shape and interactions can be precisely controlled through the use of nanofabrication technology

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"In recent times, research all over the world has shifted from a state of diversity to Quantum Information Systems (QIS), based on Nanotechnology. QIS is thesynergy of Quantum Mechanics and Information Systems, the two giants in science and technology from the last century.It explain the present state of physical realization of quantum computation devices and their future scope. The book concludes with a note on developing a Theory of Many Things for high-end complexity systems. This book would be a handy reference for researchers, scientists and professionals working in the field. It would also be useful to students of quantum computing and information systems."

"In recent times, research all over the world has shifted from a state of diversity to Quantum Information Systems (QIS), based on Nanotechnology. QIS is thesynergy of Quantum Mechanics and Information Systems, the two giants in science and technology from the last century.It explain the present state of physical realization of quantum computation devices and their future scope. The book concludes with a note on developing a Theory of Many Things for high-end complexity systems. This book would be a handy reference for researchers, scientists and professionals working in the field. It would also be useful to students of quantum computing and information systems."

"In this volume the fundamental theory of open quantum systems is revised in the light of modern developments in the field. A unified approach to the quantum evolution of open systems is presented by merging concepts and methods traditionally employed by different communities, such as quantum optics, condensed matter, chemical physics and mathematical physics. The mathematical structure and the general properties of the dynamical maps underlying open system dynamics are explained in detail. The microscopic derivation of dynamical equations, including both Markovian and non-Markovian evolutions, is also discussed. "

"This book about new directions in pseudoatom-based X-ray charge density analysis, reliable measurements of dipole moments from single-crystal diffraction data and assessment of an in-crystal enhancement, challenging problems in charge density determination : polar bonds and influence of the environment, electron density in quantum theory, residual density analysis, the source function descriptor as a tool to extract chemical information from theoretical and experimental electron densities."

"This book about more than just distances from electron density studies, modeling and analysis of hydrogen atoms, charge density methods in hydrogen bond studies. some main group chemical perceptions in the light of experimental charge density investigations. electronic structure and chemical properties of lithium organics seen through the glasses of charge density. bond orders in metal–metal interactions through electron density analysis, and on the nature of β-agostic interactions : a comparison between the molecular orbital and charge density picture."