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"This book presents a seamless and unified scheme for automating very complicated calculations required to design, evaluate performance characteristics of, and implement broadband and narrow band impedance matching sub-circuits. The results of these automated calculations (the component values of the impedance matching sub-circuit) are formatted as text SPICE(Simulation Program with Integrated Circuit Emphasis) input netlists. Readers then immediately can use any available SPICE simulator to measure the performance characteristics (DC response, transient response, frequency response, RMS power transferred from source to load, reflection coefficient insertion and transmission loss, ans standing wave ratio – SWR). The text SPICE netlist can be edited easily to fine-tune the performance characteristics, and perform design space exploration and “what-if” type of analyses.- Presents details of a coherent, logical and seamless scheme to design and measure the performance characteristics of both broad and narrow band impedance matching sub-circuits;- Relieves the designer from having to manually do complex, multi-step(therefore error-prone and time-consuming) calculations, especially those related to broadband impedance matching sub-circuit design;- Provides SPICE input netlists, which enable readers to use any available SPICE simulator to estimate the performance characteristics."

"Antena aktif yang merupakan integrasi antara antena gelombang mikro dengan perangkat aktif seperti amplifier telah mendapat perhatian yang luas pada beberapa tahun belakangan ini. Pada umumnya, penempatan elemen aktif yaitu transistor microwave dalam rangkaian terintegrasi microwave (Microwave Integrated Circuit, MIC) dibuat pada saluran transmisi microstrip. Pada tesis ini dibahas mengenai rancangan microwave power amplifier sebagai elemen aktif dari antena yang dibuat dengan memakai rangkaian penyesuai saluran transmisi coplanar waveguide. Keuntungan utama yang diharapkan dapat diperoleh dengan pemakaian coplanar waveguide antara lain; interkoneksi komponen pada rangkaian lebih mudah karena hanya bagian permukaan dari struktumya yang diperlukan, memberikan kemudahan dalam memperluas rangkaian pada bidang atas substrat sehingga sangat sesuai digunakan pada rangkaian terintegrasi microwave.Transistor microwave yang dipakai pada rancangan amplifier ini adalah GaAs MeSFET tipe NE 76084 yang memiliki potensi tidak stabil (potentially unstable) pada frekuensi 5 GHz, dan kondisi ini umumnya dihindari dalam rancangan microwave amplifier. Sekalipun transistor tersebut berpotensi tidak stabil, pada tesis ini diperlihatkan realisasi rancangan microwave amplifier dengan membuatnya menjadi stabil melalui pemilihan koefisien refleksi beban yang sesuai.Perancangan dilakukan dengan bantuan perangkat lunak CAD untuk amplifier, AutoCAD dan perangkat keras mesin cetak quick circuit. Pengukuran terhadap beberapa parameter seperti power gain, bandwith, return loss dan VSWR dilakukan pada rancangan akhir amplifier dengan frekuensi operasi 5 GHz.

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Active antennas which are integration between microwave antenna and an active device such as amplifier have found wide interest in the past few years. Mostly, the placement of active element (i.e. microwave transistor) in microwave integrated circuit (MIC) made on microstrip transmission line. This paper describes the design of microwave power amplifier as an active part of active antenna implemented on coplanar waveguide. With the design proposed here, the main advantage which may be expected from the proposed coplanar waveguide compared to microstrip line is based on the fact, that network interconnection is easily obtained. It structure's necessary only on the surface side of the substrate, allowing planar circuits on the top side to be extended and thus making it compatible with microwave integrated-circuit.

The amplifier investigated in this paper utilized GaAs MeSFET (NE 76084) which is potentially unstable can be realized by the proper selection of the load reflection coefficient. This condition must, therefore, be avoided for the design of microwave amplifier.

The amplifier was designed using several tools such as CAD for amplifier and Auto CAD software, and Quick-circuit machine. Measured result of power gain, VSWR and bandwidth of the amplifier operating in 5 GHz are given."

"The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering."

"ABSTRAKTo support the WiMAX infrastructure development in Indonesiaa dualband2.3/3.3 GHz low noise amplifier (LNA) is designed and analyzed. The LNAis designed by combining the inductive source degeneration architecture and theproposed switchable inductor for controlling gain. The chipis implemented byTSMC 0.18-μm CMOS technology.First of all, the mathematical analysis of the proposed LNA architecture isconducted. It includesinput-impedance, gain and noise figure analysis. Theproposed input-impedance analysis modifies the input impedance of the inductivesource degeneration LNA architecture, includes devices selection to fulfill S11requirement. Furthermore, the gain analysis is performed to explain the proposedswitchable inductor structure for controlling gain. It shows that combining onchipinductor paralleled with series bond-wire and on-board inductor will obtain aflatter gain for two bands of interest. The noise figure for source inductivedegeneration LNA architecture is derived. The noise figure described by thederived equations agrees well with that obtained from the simulation.Secondly, the proposed dual-band 2.3/3.3 GHz LNA is simulated. At lowbandmode, simulated results show the maximum S21 of 18.69 dB, an S11 below -29 dB, and a flat noise figure of 2.3 ~ 2.33 dB from 2.3 to 2.4 GHz. The LNApresents the IIP3 and the P1dB of -12.1 dBm and -23.3 dBm, respectively, whileconsuming 18.4 mW at 1.5 V power supply. At high-band mode, the simulationresults show the S21 of 17.01 ~ 17.48 dB, the S11 below -21 dB, and an flat noisefigure of 2.36 ~ 2.37 dB from 3.3 to 3.4 GHz. The LNA consumes only 12.9 mWat high-band mode, while exhibiting the IIP3 and the P1dB of -11.3 dBm and -22.1dBm, respectively.And then, the proposed LNA is verified by the post-simulation in whichthe bond-wire effects are considered for an on-board deployment. At low-bandmode, the post-simulation results show the S11 of -29.11 dB ~ -32 dB, the S21 of17.18 ~ 17.42 dB, and the flat noise figure of 2.67 ~ 2.71 dB. The LNA exhibitsthe IIP3 and P1dB of -13.4 dBm and -24.2 dBm respectively, while consuming16.32 mW power. At high-band mode, the LNA exhibits the S21 of 15.5 ~ 15.88dB, the S11 of -12.94 ~ -16.82 dB, and the flat noise figure of 2.52 ~ 2.54 dB whileconsuming 11.75 mW. The IIP3 and P1dB for the high-band mode are -12.3 dBmand 23.3 dBm, respectively. The total chip area ofthe proposed LNA is 0.9 mm2,including the IO pads."