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Hasil Pencarian

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The Influence of silane gas flow rate on optoelectronic properties of Uc-Si: H Prepared by HWC-VHF-PECVD Technique
Hydrogenated microcrystalline silicon (Uc-Si:H) thin films have been deposited using 10 % silane (SiH4) in H2 dilution by Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HWC-VHF-PECVD) technique.......
ITJOSCI
Artikel Jurnal  Universitas Indonesia Library