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"Dalam tesis ini, telah dilakukan optimasi tebal dua lapisan L1+L2 dari anti-reflection coating (ARC) indeks bias nar yang diberikan pada ujung pandu gelombang semikonduktor pemanduan lemah (compound III-V), untuk modus tunggal TEM: agar reflektansi kurang dari 0,0001. Jalur transmisi dipakai sebagai analogi eksak terhadap refleksi di bidang batas, sehingga hubungan kontinyuitas dapat diperoleh memakai operator diadik admitansi Y dan impedansi Z di bidang transversal, serta dengan mengganti pandu gelombang sebagai medium homogen indeks bias ne nerve melalui aproksimasi la = ( ncozdnclad -1 )112 sehingga secara praktis maka Ala (dw)-ia dimana w sebagai karakteristik tampang lintang pandu gelombang, bisa dinyatakan sebagai ketebalan lapisan aktif Melalui bentuk diferensial operator, medan elektrik backward dapat disusun melalui elemen-elemen matriks refleksi Rxx di permukaan batas, sehingga reflektansi pada z==0 dapat diperoleh. Frekuensi respons lapisan ganda untuk pengoperasian dengan = 1,55 µm, menghasilkan: (L1+L2) = n (?i4) dengan n gasal, pada nar = 1,46 (SiO2) atau 2,5870 (Si3N4, ZnSe). Bila indeks bias diambil berbeda (nar.l * nar,2), akan dihasilkan reflektansi minimum 0,58 (praktisnya adalah nol) pada L1=L2=L = 2/8 = 0,1938 m.

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In this thesis, the thickness of two layers L1+L2 anti-reflection coating (ARC) with refractive index nar of the end facet of weakly-guiding semiconductor (compound III-V), has been optimised to single mode TEM: in order that reflectance had less than 0,0001. Reflection at the boundary is exactly analogous to transmission-line models, with the result that continuity relation using dyadic admitance Y and impedance Z operators at transverse plane, also by replacing the waveguide with homogeneous medium of refractive index nc = ne,fe through Ala = ( nrarc/nc:od -1 }112 approximation such was the case 1a -- (dw}-la in practice, where w is characteristic cross-section of waveguide, can be represented of active layer thickness. Through the differential operator, backward electric field can be form by matrix elements Rxx of reflection of interface, in such a way that reflectance at the plane z--0 is obtain. Double layers response frequencies at A.= 1,55 gm operating, produced: (L1+L2) = n (7J4) where n is odd, with nar = 1,46 (SiO2) or 2,5870 (Si3N4, ZnSe). Difference of both refractive indexes (nar.' $ nar.2), to result in is minimum reflectance 0,58.10-10 (practically is zero) with L1 L2 = L = A/8 = 0,1938 m."

"in this research, thickness of two layers anti-reflection coating MRC) with refractive index na, of the endfacet of weakly-guiding semiconductor (compound ill-V), has been optimised to single Transverse Electro-Magnetic (TEM) mode: in order that reflectance had less than 0, 0001. Reflection at the boundary is exactlyanalogous to transmission-line models, with the result that continuity relation using dyadic admitance Y andimpedance Z operators at transverse plane, also by replacing the waveguide with homogeneous medium ofequivalent refractive index neg is equal to core refractive index nq 3 nm where wide of the wave guide canbe represented of active layer wideness w. Through the differential operator, backward electric field can beform by matrix elements R, of reflection of interface, in such a way that reflectance at the plane z=0 isobtained Double layers response frequencies at wavelength = 1, 55 tan operating, produced the thickness/T/4 with n=1,46 (Si02) or 2,5870 (Si3N4 ZnSe). Difference of both refractive indexes (n,,,_;;=1'1,,,.1), minimumreflectance is 0, 58 .1040 practically is zero) with optimum thickness Z/3 = 0,1938 um."