Ditemukan 6 dokumen yang sesuai dengan query
Stress Induced Leakage C urren! (SILC) telah menjadi suatu fenomena tersendiri dalam perkembangan divais MOSFET. SILC yang lbih dikenal dengan nama arus bocor ini, hadir setting dengan berkembangnya teknologi mikron dalam sebuah divais MOSFET. Berbagai penelitian telah dilakukan demi memperoleh suatu pengertian baku yang mampu menjelaskan keseluruhan fenomena SILC ini,...
Fakultas Teknik Universitas Indonesia, 2002
S39826
UI - Skripsi Membership Universitas Indonesia Library
Artikel Jurnal Universitas Indonesia Library
Annealing effect on the electrical properties change of P - type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated up to 1.75 MGy at RT (Room Temperature) were investigated. A perpendicular edge termination based on oxide ramp profile around the schottky contact is used on Al schottky rectifier...
Artikel Jurnal Universitas Indonesia Library
Danang Ramadhianto, author
[ABSTRAK
Trend penggunaan peralatan elektronika daya sesungguhnya tidak hanya ada di industri saja, namun sudah merambah pemakaian di skala rumah tangga. Peralatan elektronik seperti lampu hemat energi, lampu LED, UPS, dan perangkat lainnya yang menggunakan elektronika daya memiliki kontribusi terhadap total distorsi harmonisa di dalam jaringan listrik.
Arus bocor merupakan arus yang...
Depok: Fakultas Teknik Universitas Indonesia, 2014
T41692
UI - Tesis Membership Universitas Indonesia Library
Sanjay S. Chopade, author
FinFET (Fin Field-Effect
Transistor) technology has recently seen a major increase in adoption
for use in integrated circuits because of its high immunity to short channel
effects and its further ability to scale
down. Previously, a major research contribution was made to reduce the leakage current in the
conventional bulk devices. So many different alternatives...
2017
J-Pdf
Artikel Jurnal Universitas Indonesia Library
Sanjay S. Chopade, author
FinFET (Fin Field-Effect Transistor) technology has recently seen a major increase in adoption for use in integrated circuits because of its high immunity to short channel effects and its further ability to scale down. Previously, a major research contribution was made to reduce the leakage current in the conventional bulk...
Depok: Faculty of Engineering, Universitas Indonesia, 2017
UI-IJTECH 8:1 (2017)
Artikel Jurnal Universitas Indonesia Library
