Pengaruh perlakuan anil termal terhadap besaran optis lapisan tipis amorf silikon karbon yang dideposisi menggunakan target silikon dalam campuran gas argon, metan dan hidrogen dipelajari dengan menggunakan spektroskopi ultra violet-visible (uv-vis). Baik n maupun α, demikianpula bagian riil dan imajiner fungsi dielektrik cukup bervariasi terhadap peningkatan temperatur anil sampai 500 °C, dengan perubahan terbesar terjadi pada temperatur anil 300 °C. Lapisan tipis cenderung meningkat densitasnya dengan peningkatan temperatur anil sampai 500 °C. Gap optis memperlihatkan sedikit peningkatan dengan pemberian perlakuan anil sedangkan disorder jaringan amorf berkurang. Pemberian perlakuan anil menghasilkan pengaturan kembali jaringan amorf yang disebabkan terjadinya pemutusan ikatan hidrogen (Si-H dan C-H).
The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500 °C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H). |
