The Influence of silane gas flow rate on optoelectronic properties of Uc-Si: H Prepared by HWC-VHF-PECVD Technique
([Publisher not identified]
, [Date of publication not identified]
)
|
| Hydrogenated microcrystalline silicon (Uc-Si:H) thin films have been deposited using 10 % silane (SiH4) in H2 dilution by Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HWC-VHF-PECVD) technique..... |
| No. Panggil : | ITJOSCI |
| Subjek : | |
| Sumber Pengatalogan : | |
| ISSN : | |
| Majalah/Jurnal : | ITB Journal of Science 40 (2) Sep 2008 : 130-137 |
| Volume : | |
| Tipe Konten : | |
| Tipe Media : | |
| Tipe Carrier : | |
| Akses Elektronik : | |
| Institusi Pemilik : | |
| Lokasi : |
| No. Panggil | No. Barkod | Ketersediaan |
|---|---|---|
| ITJOSCI | TERSEDIA |
| Ulasan: |
| Tidak ada ulasan pada koleksi ini: 119191 |
