Investigation of annealing effect on the forward bias and leakage current changes of P-Type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated UP To 1.75 MGY (Application for nuclear fuel elements facilities)
([Publisher not identified]
, [Date of publication not identified]
)
|
| Annealing effect on the electrical properties change of P - type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated up to 1.75 MGy at RT (Room Temperature) were investigated. A perpendicular edge termination based on oxide ramp profile around the schottky contact is used on Al schottky rectifier fabricated on a 10 um p--type 6H-SiC epi-layer on P-type 6H-SiC substrate (3.5 off, Si face) Na : 5.9 x 10 15/cm2 |
| Subjek : | |
| Sumber Pengatalogan : | |
| ISSN : | |
| Majalah/Jurnal : | Urania Jurnal Ilmiah Daur Bahan Bakar Nuklir 15 (1) Jan 2009 : 20 - 24 |
| Volume : | |
| Tipe Konten : | |
| Tipe Media : | |
| Tipe Carrier : | |
| Akses Elektronik : | |
| Institusi Pemilik : | |
| Lokasi : |
| No. Panggil | No. Barkod | Ketersediaan |
|---|---|---|
| TERSEDIA |
| Ulasan: |
| Tidak ada ulasan pada koleksi ini: 128989 |
