Simulasi model : Heterojunction bipolar transistor silikon - germanium (HBT SiGe) berdasarkan pengaturan lebar stripe emiter (We)
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| Si-Ge HBTs is an electronic device having important role in developing Information and Telecommunication Technology. It can be shown by the superior performance of threshold frequency (fr) oscillation frequency (fosc) current gain (B) and minimum noise figure (Fn).... |
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| Majalah/Jurnal : | Jurnal Penelitian dan Pengembangan Telekomunikasi 14 (1) Jun 2009 : 40 - 45 |
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