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in this research, thickness of two layers anti-reflection coating MRC) with refractive index na, of the endfacet of weakly-guiding semiconductor (compound ill-V), has been optimised to single Transverse Electro-Magnetic (TEM) mode: in order that reflectance had less than 0, 0001. Reflection at the boundary is exactlyanalogous to transmission-line models, with the result that continuity relation using dyadic admitance Y andimpedance Z operators at transverse plane, also by replacing the waveguide with homogeneous medium ofequivalent refractive index neg is equal to core refractive index nq 3 nm where wide of the wave guide canbe represented of active layer wideness w. Through the differential operator, backward electric field can beform by matrix elements R, of reflection of interface, in such a way that reflectance at the plane z=0 isobtained Double layers response frequencies at wavelength = 1, 55 tan operating, produced the thickness/T/4 with n=1,46 (Si02) or 2,5870 (Si3N4 ZnSe). Difference of both refractive indexes (n,,,_;;=1'1,,,.1), minimumreflectance is 0, 58 .1040 practically is zero) with optimum thickness Z/3 = 0,1938 um. |
