Investigation of annealing effect on the forward bias and leakage current changes of P-Type 6H-SiC schottky diodes with SiO2 RAMP profile after Irradiated up to 1.75 MGY: Application for nuclear fuel elements facilities
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| No. Panggil : | URANIA 15 (1-4) 2009 |
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| Majalah/Jurnal : | Urania : jurnal ilmiah daur bahan bakar nuklir, 15 (1-4) 2009: 20-24 |
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| No. Panggil | No. Barkod | Ketersediaan |
|---|---|---|
| URANIA 15 (1-4) 2009 | TERSEDIA |
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| Tidak ada ulasan pada koleksi ini: 20393734 |
