ISTFA '97: proceedings of the 23rd International Symposium for Testing and Failure Analysis, 27-31 October 1997, Santa Clara Convention Center, Santa Clara, California
Manager of book production, Grace M. Davidson (ASM International, 1997)
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Contents :- Testing-Based Failure Analysis: A Critical Component of the SIA Roadmap Vision - Experimental Figures for the Defect Coverage of IDDQVectors - A CAD-Based Approach to Failure Diagnosis of CMOSLSI with Single Fault Using Abnormal IDDQ - Test and Failure Analysis Implications of a Novel Inter-Bit Dependency in a Non- Volatile Memory - Analysis of a Latent Deep Submicron CMOS Device Isolation Leakage Mechanism - Scanning Fluorescent Microthermal Imaging - Temperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM) - Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods - Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices - A New Chemical Method of Wright Etch in the Delineation of Stacking Faults and Crystalline Defects in Fabrication Silicon Wafer Substrate - Cross Sectioning with a Pivoting Sample Block - Gain Reduction in Silicon Phototransistors Induced by Metallization Mask Misalignment - The Identification of Thermal Fatigue Testing Method of Soldered Joints for Space Use - Comparison Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis - Temperature-Dependent Electronic Circuit Analogy for Predicting Wire Temperature as a Function of Current - The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC - The Usage of Focused Ion Beam Induced Deposition of Gold Film in IC Device Modification and Repair - Failure Analysis Challenges of Surface Micromachined Accelerometers - Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS) - Investigation of Multi-Level Metallization ULSls by Light Emission from the Back- Side and Front-Side of the Chip - A Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy - Novel Failure Analysis Technique - An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices - Characterization of Californium-252 (252 Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices - Dendritic Growth Failure of a Mesa Diode - Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors - Interpretation of Sudden Failures in Pump Laser Diodes - Through-Transmission Acoustic Inspection of Ball Grid Array (BGA) Packages - Moisture Detection Method in Ceramic Package by Slight Current Measurement - Laser Microchemical Technology: New Tools for Flip-Chip Debug and Failure Analysis - Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits - Electrical and Chemical Characterization of FIB-Deposited Insulators - IC Design Modification Using Laser Assisted Organometal Deposition - Transmission Electron Microscopy (TEM) Specimen Preparation Technique Using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (Wsix) - Automatic Fault Tracing Using an E-Beam Tester With Reference to a Good Sample - The Business Aspects of Failure Analysis - A Process Induced Failure Mechanism in the EEPROM Cell Its Identification and Solution - Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy - Detection of Gate Oxide Defects Using Electrochemical Wet Etching in KOH: H20 Solution - Spin-On-Glass (SOG) Contamination Causing Single Via Failure - Use of Failure Analysis Techniques to Optimize the Passivation Process for a TLM 0.35 um Process - Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices - Elimination of Whisker Growth on Tin Plated Electrodes - Characterization of CMOS Structures (0.6 um process) Submitted to HBM and COM ESO Stress Tests - BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section - SEM Equipment Capabilities Evaluated for Sub-Half Micron Semiconductor Applications - Voltage Contrast Application on 1M SRAM Single Bit Failure Analysis - Index |
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No. Panggil : | e20442506 |
Entri tambahan-Nama orang : | |
Subjek : | |
Penerbitan : | Materials Park, Ohio: ASM International, 1997 |
Sumber Pengatalogan: | LibUI eng rda |
Tipe Konten: | text |
Tipe Media: | computer |
Tipe Pembawa: | online resource |
Deskripsi Fisik: | xix, 346 pages : illustration |
Tautan: | http://portal.igpublish.com/iglibrary/search/?3 |
Lembaga Pemilik: | |
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e20442506 | TERSEDIA |
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