ISTFA '99: proceedings of the 25th international symposium for testing and failure analysis, 14-18 November 1999, Westin Hotel Santa Clara, California
ASM International (ASM International, 1999)
|
| Contents :- Terahertz Imaging: A New Technique for Inspection of Dielectric Materials - Detecting Power Shorts from Front and Backside of IC Packages Using Scanning SQUID Microscopy - Waveform Acquisition from the Backside of Silicon Using Electro-Optic Probing - Optical Probing of VLSI IC’s from the Silicon Backside - Picosecond Imaging Circuit Analysis of the IBM G6 Microprocessor Cache - Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits - Comparative TDR Analysis as a Packaging FA Tool - Light Emission Spectral Analysis: The Connection Between the Electric Field and the Spectrum - Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy - Infrared Emission Spectroscopy as a Reliability Tool - Quantitative E-beam Probe for Valid High-Speed Measurements - Short High Voltage Stress for Design-to-Process Characterization - Automatic TEM Sample Preparation - Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy - Sample Preparation for Backside Failure Analysis Using Infrared Photoemission Microscopy - In-situ Use of an Optical Microscope for FIB Microsurgery of Planarized Devices - Investigation on the Corrosion of Cu Metallization in the Focused Ion Beam System Due to a low I2 Background - Tin Corrosion Induced by Corrosive De-Ionized (DI) Water - Latch-Up Induced Slit Voiding in Aluminum Metal Lines - Failure Analysis of Discolored Bondpads in Wafer Fabrication - Optimizing Contact Resistance at a Resistor/Conductor Interface via Thin Film Microanalysis and Process Design of Experiments - Failure Analysis of Plastic Packaged GaAs and AlGaAs/GaAs LEDs - A Technique for Measuring Device Temperature with High Accuracy in Accelerated Operational Life Tests - Temperature Measurement on Micromachined IR Bolometers Using an Infrared Microscope - Automated Translation of Final Test Programs to Inexpensive FA Testers - FMECA Modeling-A New Approach - Selective Au-Etching on Aged GaAs-Based Devices - Nondestructive Detection of Cracks in Ceramics Using Vicinal Illumination - Evacuated FM08 Fuses Carry a Sustained Arc in a Bus over 75 VDC - Advanced Statistical Tools for Improving Yield and Reliability - An Application of Passive Voltage Contrast (PVC) to Failure Analysis of CMOS LSIs Using Secondary Electron Collection - Integrated Circuit Device Repair Using FIB system: Tips, Tricks, And Strategies - Modeling and Optimizing XeF2-Enhanced FIB Milling of Silicon - Reliability Test Results for Pt FIB Interconnect Structures - Focused Ion Beam Induced Effects on MOS Transistor Parameters - Relay Failures Specific to Space Applications - Failure Analysis of Autoclave-Stressed SRAMs with Aluminum Fuses - Electrostatic-Discharge (ESD) Failures in Thin-Film Resistors - Characterization of Gold Embrittlement in Solder Joints - In-situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM - Die Backside FIB Preparation for Identification and Characterization of Metal Voids - FIB Micromachining and Nano-Structure Fabrication - Characterization and Fault Identification of Copper BEOL Sub 0.25 um Six Level Metal Microprocessor Designs - Analysis Of Ohmic Contact Metal Deposition Using FIB/SEM For A GaAs MESFET Clock Buffer IC Device - Identification of Subtle Isb Failure Mechanisms - Investigation of High Frequency Failures on a 0.35 um CMOS IC - BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy - Current-Signature-Based Analysis of Complex Test Fails - New Techniques for Logic Fault Diagnosis with a Case Study on the 440 BX Chipset - Electromigration and Electrochemical Reaction Mixed Failure Mechanism in Gold Interconnection System - Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology - Visualization of Local Gate Depletion in PMOSFETs Using Unique Backside Etching and Selective Etching Technique - Residual Photoresist Identified as Cause for Frequency-Dependent Signal-to- Noise Failure After Autoclave Stress Testing - From IDDQ Fault Detection to Defect Localization in Logic CMOS Integrated Circuits: Key Issues - Recent Advances in Broad Ion Beam Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors - A New Focused-Ion-Beam Microsampling Technique for TEM Observation of Site-specific Area’s - A Combined Infrared/Visible Photoemission Microscope - Correlation of Electronic and Thermal Properties of - Index |
 ISTFA '99 proceedings of the 25th international symposium for testing and failure analysis, 14-18 November 1999,Westin Hotel Santa Clara, California.pdf :: Unduh
|
| No. Panggil : | e20442508 |
| Subjek : | |
| Penerbitan : | Materials Park, Ohio: ASM International, 1999 |
| Sumber Pengatalogan: | LibUI eng rda |
| Tipe Konten: | text |
| Tipe Media: | computer |
| Tipe Pembawa: | online resource |
| Deskripsi Fisik: | xvii, 486 pages : illustration |
| Tautan: | http://portal.igpublish.com/iglibrary/search/ASMIB0000019.main.html?8 |
| Lembaga Pemilik: | |
| Lokasi: |
| No. Panggil | No. Barkod | Ketersediaan |
|---|---|---|
| e20442508 | TERSEDIA |
| Ulasan: |
| Tidak ada ulasan pada koleksi ini: 20442508 |
