ISTFA 2001 proceedings of the 27th International Symposium for Testing and Failure Analysis: 11-15 November 2001, Santa Clara Convention Center, Santa Clara, California
Electronic Device Failure Analysis Society (ASM International, 2001)
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| Contents - IPFA 2000 Best Paper Award Winner - Application of Focused Ion Beam System as a Defect Localization and Root Cause Analysis Tool - Session 1: Advanced Techniques 1 - X-Ray Tomography of Integrated Circuit Interconnects: Past and Future - X-ray Nanotomog Raphy (XRMT) Tool for Non-Destructive High-Resolution Imaging of ICs - Single Point PICA Probing with an Avalanche Photo-Diode - Session 2: Advanced Techniques 2 - Comparison of Laser and Emission Based Optical Probe Techniques - Resistive Interconnection Localization - Optical Waveform Probing–Strategies for Non-Flipchip Devices and Other Applications - Advanced LIVA/TIVA Techniques - Session 3: Packaging - Super-conducting Quantum Interference Device Technique: 3-D Localization of a Short Within a Flip Chip Assembly - Integration of SQUID Microscopy into FA Flow - Evaluation of alternative Preparation Methods for Failure Analysis at modern Chip-and Package Technologies - TDR Analysis of Advanced Microprocessors - Signal Trace and Power Plane Shorts Fault Isolation Using TDR - Session 4: Poster Session - Backside Etch: A New FA Technique for Gate Oxide Pinhole and Si Defect Identification for Power IC Devices - Fabrication Of Inexpensive Decapsulation Fixtures for Small or Unique Plastic Packages - Failure Analysis of Plasma-Induced Submicron CMOS IC Yield Loss by Backside Photoemission Microscopy - Failure Types & Analysis In Cu Process Development of Design-Rule 0.18 μm CPU - TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis - Design Debug and Design Fix Verification in a Failure Analysis Lab for a RF/IF Circuit for Cellular Applications With High Battery Save and Electrostatic Discharge Leakage: A Case Study - Self Aligned Contact Wordline-Bitline Shorts in Memory ICs–a Comparative Study of a Failure Mode, Its Root Causes, And Simple, But Highly Effective Analysis Techniques - A Spatial Filtering Localisation Tool for Failure Analysis of Periodic Circuits - New Manifestation of Electrical Overstress in Advanced Device Technologies - Session 5: Backside 1 - Implementing Thermal Laser Stimulation in a Failure Analysis Laboratory - Calibration Technique for MCT FPA used for Backside Emission Microsopy - Liquid Immersion Objective for High-Resolution Optical Probing of Advanced Microprocessors - New Signal Detection Methods for Thermal Beam Induced Phenomenon - CNC Milling and Polishing Techniques for Backside Sample Preparation - Session 6: SPM - Characterization of MOS Devices by Scanning Thermal Microscopy (SThM) - Contactless Failure Analysis of Integrated Circuits Via Current Contrast Imaging with Magnetic Force Microscopy - Multiple Probe Deep Sub-Micron Electrical Measurements Using Leading Edge Micro-Machined Scanning Probes - Electrical Characterization of Circuits with Low K Dielectric Films and Copper Interconnects - Session 7: Backside 2 - Emission Microscopy and Thermal Laser Stimulation for Backside Failure Localization - CMOS Front-End Investigation over Large Areas by Deprocessing from the Back Side - New Techniques for the Identification of Defects in Multi-Layer Flip-Chip Packages - Session 8: Case Histories 1 - Board Level Failure Analysis of Chip Scale Packages - IC Failure by Electrical Overstress (EOS) - The Search for the Elusive EOS Monster - Session 9: FIB - Effect of Ga Staining due to FIB Editing on IR Imaging of Flip Chips - Water Vapor Enhancement for Elemental Analysis Using Focused Ion Beam Secondary Ion Mass Spectrometry (FIB-SIMS) - Various Focused Ion Beam Microsurgery Techniques in Dealing with Copper Metalization in ICs - Reliability of Bipolar and MOS Circuits After FIB Modification - Mass Production Cross-Section Tem Samples by Focus Ion Beam Masking and Reactive Ion Etching - Session 10: Case Histories 2 - A Successful Failure Analysis Using Front and Backside Fault Localization Techniques on a Deep Sub-Micron CMOS Device - Use of STEM in Nanometer Level Defect Analysis of SRAM Devices - A New Deprocessing Technique By Selective Wet-Etch Of Passivation And Inter Metal Dielectric Layers For Submicron Devices - SRAM Failure Analysis Flow - Physical Failure Analysis on Vertical Dielectric Films - Session 11: MEMS - Design for Reliability of MEMS/MOEMS for Lightwave Telecommunications - Mechanical Characterization of Materials Used in MEMS - Optical Imaging of High-Frequency Resonances and Semi-Static Deformations in Micro-Elec |
 ISTFA 2001 proceedings of the 27th international symposium for testing and failure analysis, 11 - 15 November 2001, Santa Clara Convention Center, Santa Clara, California.pdf :: Unduh
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| No. Panggil : | e20442603 |
| Subjek : | |
| Penerbitan : | Materials Park, Ohio: ASM International, 2001 |
| Sumber Pengatalogan: | LibUI eng rda |
| Tipe Konten: | text |
| Tipe Media: | computer |
| Tipe Pembawa: | online resource |
| Deskripsi Fisik: | xix, 485 pages : illustration |
| Tautan: | http://portal.igpublish.com/iglibrary/search/ASMIB0000053.main.html?12 |
| Lembaga Pemilik: | |
| Lokasi: |
| No. Panggil | No. Barkod | Ketersediaan |
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| e20442603 | TERSEDIA |
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| Tidak ada ulasan pada koleksi ini: 20442603 |
