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Artikel Jurnal :: Kembali

Effect of post-hydrothermal treatments on the physical properties of zno layer derived from chemical bath deposition

Akhmad Herman Yuwono, Nofrijon Sofyan, Chairul Hudaya, Muhammad Ikhlasul Amal (Faculty of Engineering, Universitas Indonesia, 2017)

 Abstrak

Among semiconductors, zinc oxide (ZnO) has received great attention due to its wide band-gap and high electron mobility, resulting in various strategic applications. Controlling the physical properties of ZnO is therefore a critical issue in the fabrication of related electronic and optical devices. In this study, ZnO nanorods layers were grown on an ITO glass substrate via chemical bath deposition at low temperature. Prior to the growing process, the layers were deposited using a spin-coating technique. The seeding solution was made by dissolving zinc nitrate tetrahydrate and hexamethylene tetraamine in cold water (0oC) for an hour using a cooler bath. The as-synthesized ZnOs were further subjected to different post-hydrothermal treatment series at a temperature of 150oC for three hours at atmospheric pressure and at 100°C for one hour under one bar of nitrogen gas (N2) pressure. The characterization was performed using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and UV-Vis spectroscopy. The SEM results showed that the ZnO nanorods were grown as a vertically aligned hexagonal structure, while the XRD patterns showed a high intensity at the (002) plane. On the basis of investigation, it was found that under post-hydrothermal treatment at 150oC for three hours with atmospheric pressure, the synthesis procedure resulted in nanostructures in the form of ZnO rods. Meanwhile, post-hydrothermal treatment at 100°C for one hour under one bar of nitrogen gas (N2) produced ZnO rods and tubes. In general, the post-hydrothermal process provided a high degree of crystallinity. The optimum ZnO layer was obtained after post-hydrothermal treatment at 150oC for three hours at atmospheric pressure, with a crystallite size and band-gap energy of ~18 nm and 3.20 eV, respectively.

 Metadata

No. Panggil : UI-IJTECH 8:4 (2017)
Entri utama-Nama orang :
Subjek :
Penerbitan : Depok: Faculty of Engineering, Universitas Indonesia, 2017
Sumber Pengatalogan : LibUI eng rda
ISSN : 20869614
Majalah/Jurnal : International Journal of Technology
Volume : Vol. 8, No. 4, July 2017: Hal. 651-661
Tipe Konten : text
Tipe Media : unmediated
Tipe Carrier : volume
Akses Elektronik : https://doi.org/10.14716/ijtech.v8i4.9487
Institusi Pemilik : Universitas Indonesia
Lokasi : Perpustakaan UI, Lantai 4 R. Koleksi Jurnal
  • Ketersediaan
  • Ulasan
No. Panggil No. Barkod Ketersediaan
UI-IJTECH 8:4 (2017) 08-23-82581420 TERSEDIA
Ulasan:
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