Ditemukan 4 dokumen yang sesuai dengan query
Irma Saraswati, author
ABSTRACT
A good justification for gallium nitride on silicon is a potential for optoelectronic integrated circuits, and its low cost has stimulated the growth of GaN on large size wafers. The application interest for GaN/Si is power electronics. This current work focuses on characterization optical, electro-optical, and microstructural and simulation design...
2016
D2035
UI - Disertasi (Membership) Universitas Indonesia Library
Maratul Hamidah, author
ABSTRAK
Divais directional coupler dan optical switch merupakan komponen yang
dibutuhkan dalam pemrosesan sinyal optik. Kemajuan teknologi wavelength division
multiplexing (WDM) dan pertumbuhan lalu lintas internet yang cepat memicu banyak
penelitian tentang teknologi switching optik. Galium Nitrida (GaN) merupakan material
semikonduktor nitrida kelompok III yang menjadi kandidat menjanjikan untuk divais
yang beroperasi pada panjang gelombang komunikasi...
2019
T53144
UI - Tesis (Membership) Universitas Indonesia Library
Narendra Putra Dipta, author
Recently, gallium nitride (GaN) material has attracted the attention of researchers as a candidate for third generation semiconductor material for optical telecommunication applications. In this research, a 2x2 multimode interference optical power splitter (MMI) based on a waveguide and ridge structure is proposed using gallium nitride material on a silicon...
Depok: Fakultas Teknik Universitas Indonesia , 2020
S-Pdf
UI - Skripsi (Membership) Universitas Indonesia Library
Pearton, Stephen, editor
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap...
Berlin : [Springer, ], 2012
e20425227
eBooks Universitas Indonesia Library
