Ditemukan 2 dokumen yang sesuai dengan query
Annealing effect on the electrical properties change of P - type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated up to 1.75 MGy at RT (Room Temperature) were investigated. A perpendicular edge termination based on oxide ramp profile around the schottky contact is used on Al schottky rectifier...
Artikel Jurnal Universitas Indonesia Library
Bera, Subhash Chandra, author
The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes,...
Singapore: Springer Nature, 2019
e20509252
eBooks Universitas Indonesia Library
