Rancangan memori 16 bit menggunakan surface channel charge coupled device

Analisis dan perancangan buried-channel charge coupled device (BCCD) menggunakan bahan silikon

Rancangan surface-channel charge coupled devices dan buried-channel charge coupled devices dalam satu substrat

Pengendali peralatan elektronik menggunakan sinar infra merah

Analisis rancangan vertical overflow drain (VOD) pada buried charge coupled device (BCCD) untuk menekan blooming dengan variasi konsentrasi impurity dan tebal p-well = Design analysis of vertical overflow drain (VOD) in buried charge coupled device (BCCD) to suppress blooming with impurity concentration and p-well width variations