Perencanaan dan analisa fotodioda pin gaInAsP/InP sebagai Detektor Laser pada λ = 1,28 µm

Efek miniaturisasi dimensi panjang dan lebar terhadap karakteristik i-v pada nanodioda lateral persambungan p-n dan p-i-n = Miniaturization effect of channel length and width dimension to i-v characteristics of lateral p-n and p-i-n junction nanodiode

Karakteristik arus tegangan dioda P-I-N dan P-N silikon skala nano doping tinggi pada temperatur rendah = Current voltage characteristics of highly doped nanoscale silicon P-I-N and P-N diodes at low temperature

Pengaruh panjang co-doped dan intrinsic region terhadap subthreshold swing (SS) pada divais lateral p-n dan p-i-n berskala nano = Impact of co-doped and intrinsic region length on subthreshold swing (SS) in si nanoscale lateral p-n and p-i-n devices

Linear i-v characteristics of highly-doped soi p-i-n diode for low temperature measurement