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Abstrak :
Pengaruh perlakuan anil termal terhadap besaran optis lapisan tipis amorf silikon karbon yang dideposisi menggunakan target silikon dalam campuran gas argon, metan dan hidrogen dipelajari dengan menggunakan spektroskopi ultra violet-visible (uv-vis). Baik n maupun α, demikianpula bagian riil dan imajiner fungsi dielektrik cukup bervariasi terhadap peningkatan temperatur anil sampai 500 °C, dengan perubahan terbesar terjadi pada temperatur anil 300 °C. Lapisan tipis cenderung meningkat densitasnya dengan peningkatan temperatur anil sampai 500 °C. Gap optis memperlihatkan sedikit peningkatan dengan pemberian perlakuan anil sedangkan disorder jaringan amorf berkurang. Pemberian perlakuan anil menghasilkan pengaturan kembali jaringan amorf yang disebabkan terjadinya pemutusan ikatan hidrogen (Si-H dan C-H).

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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500 °C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H).

Abstrak :
Studi tentang pengaruh anil termal terhadap besaran optis dan disorder lapisan tipis amorf silikon karbon terhidrogenasi (a-SiC:H) telah dilakukan. Lapisan tipis dihasilkan dengan teknik deposisi sputtering menggunakan target grafit dan wafer silikon yang dilakukan dalam campuran gas argon dan hidrogen, kemudian dikarakterisasi dengan spektroskopi uv-vis (ultra violet-visible) sebelum dan setelah diberikan perlakuan anil termal. Indeks bias n dan koefisien absorpsi α diperoleh dari hasil pengukuran transmitansi. Gap optis memperlihatkan sedikit variasi terhadap temperatur anil, yakni meningkat dengan bertambahnya temperatur anil sampai 500 °C. Kenaikan temperatur anil menyebabkan densitas lapisan tipis berkurang dan demikianpula disorder jaringan amorfnya. Hasil eksperimen akan didiskusikan dalam hubungannya dengan kondisi deposisi dan hasil eksperimen lain.

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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case. A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H) films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible) spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.