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Daniel Moraru, author
In silicon nanoscale transistors, dopant atoms can significantly affect the transport characteristics, in particular at low temperatures. Investigation of coupling between neighboring dopants in such devices is essential in defining the properties for transport. In this work, we present an overview of different regimes of inter-dopant coupling, controlled by doping...
Depok: Faculty of Engineering, Universitas Indonesia, 2015
UI-IJTECH 6:6 (2015)
Artikel Jurnal Universitas Indonesia Library
