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"Contents :- Testing-Based Failure Analysis: A Critical Component of the SIA Roadmap Vision - Experimental Figures for the Defect Coverage of IDDQVectors - A CAD-Based Approach to Failure Diagnosis of CMOSLSI with Single Fault Using Abnormal IDDQ - Test and Failure Analysis Implications of a Novel Inter-Bit Dependency in a Non- Volatile Memory - Analysis of a Latent Deep Submicron CMOS Device Isolation Leakage Mechanism - Scanning Fluorescent Microthermal Imaging - Temperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM) - Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods - Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices - A New Chemical Method of Wright Etch in the Delineation of Stacking Faults and Crystalline Defects in Fabrication Silicon Wafer Substrate - Cross Sectioning with a Pivoting Sample Block - Gain Reduction in Silicon Phototransistors Induced by Metallization Mask Misalignment - The Identification of Thermal Fatigue Testing Method of Soldered Joints for Space Use - Comparison Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis - Temperature-Dependent Electronic Circuit Analogy for Predicting Wire Temperature as a Function of Current - The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC - The Usage of Focused Ion Beam Induced Deposition of Gold Film in IC Device Modification and Repair - Failure Analysis Challenges of Surface Micromachined Accelerometers - Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS) - Investigation of Multi-Level Metallization ULSls by Light Emission from the Back- Side and Front-Side of the Chip - A Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy - Novel Failure Analysis Technique - An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices - Characterization of Californium-252 (252 Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices - Dendritic Growth Failure of a Mesa Diode - Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors - Interpretation of Sudden Failures in Pump Laser Diodes - Through-Transmission Acoustic Inspection of Ball Grid Array (BGA) Packages - Moisture Detection Method in Ceramic Package by Slight Current Measurement - Laser Microchemical Technology: New Tools for Flip-Chip Debug and Failure Analysis - Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits - Electrical and Chemical Characterization of FIB-Deposited Insulators - IC Design Modification Using Laser Assisted Organometal Deposition - Transmission Electron Microscopy (TEM) Specimen Preparation Technique Using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (Wsix) - Automatic Fault Tracing Using an E-Beam Tester With Reference to a Good Sample - The Business Aspects of Failure Analysis - A Process Induced Failure Mechanism in the EEPROM Cell Its Identification and Solution - Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy - Detection of Gate Oxide Defects Using Electrochemical Wet Etching in KOH: H20 Solution - Spin-On-Glass (SOG) Contamination Causing Single Via Failure - Use of Failure Analysis Techniques to Optimize the Passivation Process for a TLM 0.35 um Process - Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices - Elimination of Whisker Growth on Tin Plated Electrodes - Characterization of CMOS Structures (0.6 um process) Submitted to HBM and COM ESO Stress Tests - BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section - SEM Equipment Capabilities Evaluated for Sub-Half Micron Semiconductor Applications - Voltage Contrast Application on 1M SRAM Single Bit Failure Analysis - Index "

"Contents - IPFA 2000 Best Paper Award Winner - Application of Focused Ion Beam System as a Defect Localization and Root Cause Analysis Tool - Session 1: Advanced Techniques 1 - X-Ray Tomography of Integrated Circuit Interconnects: Past and Future - X-ray Nanotomog Raphy (XRMT) Tool for Non-Destructive High-Resolution Imaging of ICs - Single Point PICA Probing with an Avalanche Photo-Diode - Session 2: Advanced Techniques 2 - Comparison of Laser and Emission Based Optical Probe Techniques - Resistive Interconnection Localization - Optical Waveform Probing–Strategies for Non-Flipchip Devices and Other Applications - Advanced LIVA/TIVA Techniques - Session 3: Packaging - Super-conducting Quantum Interference Device Technique: 3-D Localization of a Short Within a Flip Chip Assembly - Integration of SQUID Microscopy into FA Flow - Evaluation of alternative Preparation Methods for Failure Analysis at modern Chip-and Package Technologies - TDR Analysis of Advanced Microprocessors - Signal Trace and Power Plane Shorts Fault Isolation Using TDR - Session 4: Poster Session - Backside Etch: A New FA Technique for Gate Oxide Pinhole and Si Defect Identification for Power IC Devices - Fabrication Of Inexpensive Decapsulation Fixtures for Small or Unique Plastic Packages - Failure Analysis of Plasma-Induced Submicron CMOS IC Yield Loss by Backside Photoemission Microscopy - Failure Types & Analysis In Cu Process Development of Design-Rule 0.18 μm CPU - TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis - Design Debug and Design Fix Verification in a Failure Analysis Lab for a RF/IF Circuit for Cellular Applications With High Battery Save and Electrostatic Discharge Leakage: A Case Study - Self Aligned Contact Wordline-Bitline Shorts in Memory ICs–a Comparative Study of a Failure Mode, Its Root Causes, And Simple, But Highly Effective Analysis Techniques - A Spatial Filtering Localisation Tool for Failure Analysis of Periodic Circuits - New Manifestation of Electrical Overstress in Advanced Device Technologies - Session 5: Backside 1 - Implementing Thermal Laser Stimulation in a Failure Analysis Laboratory - Calibration Technique for MCT FPA used for Backside Emission Microsopy - Liquid Immersion Objective for High-Resolution Optical Probing of Advanced Microprocessors - New Signal Detection Methods for Thermal Beam Induced Phenomenon - CNC Milling and Polishing Techniques for Backside Sample Preparation - Session 6: SPM - Characterization of MOS Devices by Scanning Thermal Microscopy (SThM) - Contactless Failure Analysis of Integrated Circuits Via Current Contrast Imaging with Magnetic Force Microscopy - Multiple Probe Deep Sub-Micron Electrical Measurements Using Leading Edge Micro-Machined Scanning Probes - Electrical Characterization of Circuits with Low K Dielectric Films and Copper Interconnects - Session 7: Backside 2 - Emission Microscopy and Thermal Laser Stimulation for Backside Failure Localization - CMOS Front-End Investigation over Large Areas by Deprocessing from the Back Side - New Techniques for the Identification of Defects in Multi-Layer Flip-Chip Packages - Session 8: Case Histories 1 - Board Level Failure Analysis of Chip Scale Packages - IC Failure by Electrical Overstress (EOS) - The Search for the Elusive EOS Monster - Session 9: FIB - Effect of Ga Staining due to FIB Editing on IR Imaging of Flip Chips - Water Vapor Enhancement for Elemental Analysis Using Focused Ion Beam Secondary Ion Mass Spectrometry (FIB-SIMS) - Various Focused Ion Beam Microsurgery Techniques in Dealing with Copper Metalization in ICs - Reliability of Bipolar and MOS Circuits After FIB Modification - Mass Production Cross-Section Tem Samples by Focus Ion Beam Masking and Reactive Ion Etching - Session 10: Case Histories 2 - A Successful Failure Analysis Using Front and Backside Fault Localization Techniques on a Deep Sub-Micron CMOS Device - Use of STEM in Nanometer Level Defect Analysis of SRAM Devices - A New Deprocessing Technique By Selective Wet-Etch Of Passivation And Inter Metal Dielectric Layers For Submicron Devices - SRAM Failure Analysis Flow - Physical Failure Analysis on Vertical Dielectric Films - Session 11: MEMS - Design for Reliability of MEMS/MOEMS for Lightwave Telecommunications - Mechanical Characterization of Materials Used in MEMS - Optical Imaging of High-Frequency Resonances and Semi-Static Deformations in Micro-Elec"

"Contents :- Session 1: Advanced Techniques - Scanning Magnetoresistive Microscopy for Die-Level Sub-Micron Current Density Mapping - High Resolution Current Imaging by Direct Magnetic Field Sensing - Fault Isolation of High Resistance Defects using Comparative Magnetic Field Imaging - High Resolution Backside Thermography using a Numerical Aperture Increasing Lens - Session 2: Optical Techniques - Study of Critical Factors Determining Latchup Sensitivity of ICs using Emission Microscopy - New Applications of Thermal Laser Signal Injection Microscopy (T-LSIM) - PC Card Based Optical Probing of Advanced Graphics Processor using Time Resolved Emission - Time-Resolved Optical Measurements from 0.13μm CMOS Technology Microprocessor using a Superconducting Single-Photon Detector - IC Diagnostic with Time Resolved Photon Emission and CAD Auto-channeling - Session 3: Package Level Analysis 1 - 3D X-ray Computed Tomography (CT) for Electronic Packages - High-Angle Electron Microscopy Technique for Analysis of Thin Film Contamination on IC Package Exteriors - Solder Bump Defects in Ceramic Flip Chip Packages and Their Acoustic Signatures. - Copper Bond over Active Circuit (BOAC) and Copper over Anything (COA) Failure Analysis - Investigation of Bond-pad Related Inter-metal Dielectric Crack - Session 4: Sample Preparation 1 - Enhanced SEM Doping Contrast - Interconnect and Gate Level Delayering Techniques for Cu/Low k Technology Failure Analysis - Backside Deprocessing of CMOS SOI Devices for Physical Defect and Failure Analysis - A Novel Approach to Front-side Deprocessing for Thinned Die after Backside Failure Isolation - Session 5: System Level Analysis - Dynamic Infrared System Level Fault Isolation - X-ray Laminography Benchmarking and Failure Analysis of Solder Joint Interfaces - XRF Correlation of Board Reseats due to Intermittent Failures from the use of Thin Gold Plating finish on the Contact Fingers - Session 6: Metrology and Materials Analysis 1 - Deal Time SEM Imaging of FIB Milling Processes for Extended Accuracy on TEM Samples for EFTEM Analysis - A Method for Exact Determination of Dram Deep Trench Surface Area - A Review of TEM Observations of Failures of the Memory Cell in a Deep Trench Capacitor DRAM - The Effect of Tem Specimen Preparation Method on Ultra-thin Gate Dielectric Analysis - Forward Scattered Scanning Electron Microscopy for Semiconductor Metrology and Failure Analysis - Session 7: Failure Analysis Process - Contributions of a Formal Analysis Metaprocess to Breakthrough Failure Analysis Results - SRAM Failure Analysis Strategy - VLSI Design for Functional Failure Analysis in the < 90 nm and Flip-chip era - Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques - Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement - Session 8: Metrology and Materials Analysis 2 - Contact Failure due to Particulate Defect in a 0.13 μm CMOS Process - Microhardness Testing on Via Fill Material for Via In Pad Technology - Application of ToF-SIMS to Airborne Organic Contamination Analysis - Session 9: Test 1 - Yield-Modeling and Test Oriented Taxonomy of IC Structure Deformations - Analysis of IC Manufacturing Process Deformations: An Automated Approach Using SRAM Bit Fail Maps - Electrical Failure Analysis and Characterization of Leakage Paths Leading to Single Cell Failures in 128Mbit SDRAMs - Session 10: Poster - A Study on Fluorine-Induced Corrosion on Microchip Aluminum Bondpads - Advanced Process Defect Detection by Using Dynamic Bias Condition and MCT Camera - Via Chain Failure Analysis Using a Combination of E-Beam and Optical Beam Techniques - ESD Failure Signature Differences in the Devices Core Logic and Protection Structures -- A Case Study - ESD: Correlation between Electrical Signature and Failure Modes - Semi-Automated Cross-Section Process for Complti-Face Perimeter Samples - FIB Micro-pillar sampling of Si devices and its 3D observation - Recent Developments in Automated Sample Preparation for FESEM - Wet Delineation of SEM Samples having Cu Interconnects - An Evolution in Plastic Decapsulation Process Improvement - Near IR Continuous Wavelength Spectroscopy of Photon Emissions from Semiconductor Devices - Defect Isolation and Characterization in Contacts by Using Primary Voltage Adjustment"

"Contents :- Terahertz Imaging: A New Technique for Inspection of Dielectric Materials - Detecting Power Shorts from Front and Backside of IC Packages Using Scanning SQUID Microscopy - Waveform Acquisition from the Backside of Silicon Using Electro-Optic Probing - Optical Probing of VLSI IC’s from the Silicon Backside - Picosecond Imaging Circuit Analysis of the IBM G6 Microprocessor Cache - Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits - Comparative TDR Analysis as a Packaging FA Tool - Light Emission Spectral Analysis: The Connection Between the Electric Field and the Spectrum - Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy - Infrared Emission Spectroscopy as a Reliability Tool - Quantitative E-beam Probe for Valid High-Speed Measurements - Short High Voltage Stress for Design-to-Process Characterization - Automatic TEM Sample Preparation - Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy - Sample Preparation for Backside Failure Analysis Using Infrared Photoemission Microscopy - In-situ Use of an Optical Microscope for FIB Microsurgery of Planarized Devices - Investigation on the Corrosion of Cu Metallization in the Focused Ion Beam System Due to a low I2 Background - Tin Corrosion Induced by Corrosive De-Ionized (DI) Water - Latch-Up Induced Slit Voiding in Aluminum Metal Lines - Failure Analysis of Discolored Bondpads in Wafer Fabrication - Optimizing Contact Resistance at a Resistor/Conductor Interface via Thin Film Microanalysis and Process Design of Experiments - Failure Analysis of Plastic Packaged GaAs and AlGaAs/GaAs LEDs - A Technique for Measuring Device Temperature with High Accuracy in Accelerated Operational Life Tests - Temperature Measurement on Micromachined IR Bolometers Using an Infrared Microscope - Automated Translation of Final Test Programs to Inexpensive FA Testers - FMECA Modeling-A New Approach - Selective Au-Etching on Aged GaAs-Based Devices - Nondestructive Detection of Cracks in Ceramics Using Vicinal Illumination - Evacuated FM08 Fuses Carry a Sustained Arc in a Bus over 75 VDC - Advanced Statistical Tools for Improving Yield and Reliability - An Application of Passive Voltage Contrast (PVC) to Failure Analysis of CMOS LSIs Using Secondary Electron Collection - Integrated Circuit Device Repair Using FIB system: Tips, Tricks, And Strategies - Modeling and Optimizing XeF2-Enhanced FIB Milling of Silicon - Reliability Test Results for Pt FIB Interconnect Structures - Focused Ion Beam Induced Effects on MOS Transistor Parameters - Relay Failures Specific to Space Applications - Failure Analysis of Autoclave-Stressed SRAMs with Aluminum Fuses - Electrostatic-Discharge (ESD) Failures in Thin-Film Resistors - Characterization of Gold Embrittlement in Solder Joints - In-situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM - Die Backside FIB Preparation for Identification and Characterization of Metal Voids - FIB Micromachining and Nano-Structure Fabrication - Characterization and Fault Identification of Copper BEOL Sub 0.25 um Six Level Metal Microprocessor Designs - Analysis Of Ohmic Contact Metal Deposition Using FIB/SEM For A GaAs MESFET Clock Buffer IC Device - Identification of Subtle Isb Failure Mechanisms - Investigation of High Frequency Failures on a 0.35 um CMOS IC - BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy - Current-Signature-Based Analysis of Complex Test Fails - New Techniques for Logic Fault Diagnosis with a Case Study on the 440 BX Chipset - Electromigration and Electrochemical Reaction Mixed Failure Mechanism in Gold Interconnection System - Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology - Visualization of Local Gate Depletion in PMOSFETs Using Unique Backside Etching and Selective Etching Technique - Residual Photoresist Identified as Cause for Frequency-Dependent Signal-to- Noise Failure After Autoclave Stress Testing - From IDDQ Fault Detection to Defect Localization in Logic CMOS Integrated Circuits: Key Issues - Recent Advances in Broad Ion Beam Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors - A New Focused-Ion-Beam Microsampling Technique for TEM Observation of Site-specific Area’s - A Combined Infrared/Visible Photoemission Microscope - Correlation of Electronic and Thermal Properties of - Index"

"This book constitutes the refereed proceedings of the 12th International Conference on Intelligent Virtual Agents, IVA 2012, held in Santa Cruz, CA, USA, in September 2012. The 17 revised full papers presented together with 31 short papers and 18 poster papers were carefully reviewed and selected from numerous submissions. The papers are organized in topical sections on IVAs on learning environments, emotion and personality, evaluation and empirical studies, multimodal perception and expression, narrative and interactive applications, social interaction, authoring and tools, and conceptual frameworks."

"ABSTRAKSetelah berintegrasi dengan Indonesia di tahun 1976, Timor Timur mengalamiperkembangan di bidang infrastrukturnya, baik melalui pembangunan yangdilakukan oleh pemerintah maupun operasi-operasi teritorial Angkatan BersenjataRepublik Indonesia (ABRI) untuk memajukan propinsi baru tersebut. Namun,Peristiwa Santa Cruz yang terjadi pada 12 November 1991 menarik perhatian duasurat kabar besar di Indonesia, yakni Kompas dan Suara Pembaruan. Melaluiberita, artikel, headline, dan tajuk rencananya, dua surat kabar tersebut berusahamemberi sekaligus menganalisa informasi, serta turut memberikan pendapatnyaterhadap rangkaian peristiwa seutuhnya. Kedua surat kabar ini memilikipersamaan dalam gaya penyampaian berita, namun tidak jarang pula terdapatperbedaan sudut pandang yang kemudian justru membuat dua surat kabar ini lebihmenarik untuk dibahas

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ABSTRACTAfter its integration to Indonesia in 1976, East Timor was experiencing a lot ofinfrastructure improvements carried by both the government and ABRI, byconducting some serious developments and territorial operations to make the newprovince a better place to live in. Unfortunately, there was a great massacrehappened in November 12th 1991, which later recognized as Santa Cruz Massacre,that obviously drew the attentions of two greatest Indonesian newspaper, Kompasand Suara Pembaruan. Through the reports, articles, headlines, and editorials ofeach newspaper, both Kompas and Suara Pembaruan were intending to give theirbest information and analysis comprehensively. Although having the same styleon news-reporting, both newspapers had contrary points of view which is franklyenticing to be studied."

"Konstitusi RI menjamin kemerdekaan setiap penduduk dalam memeluk dan beribadat menurut agama dan kepercayaannya. Namun, puluhan tahun sejak kemerdekaan Republik Indonesia, konflik akibat pendirian rumah ibadat masih jamak terjadi. Beberapa kasus menunjukkan bahwa kaum minoritas di daerah mayoritas penduduk memeluk agama berbeda mengalami hambatan dalam mendirikan rumah ibadat. Tujuan dilakukannya penelitian ini untuk mengetahui bagaimana negara memainkan peran dalam konflik yang berlangsung di tengah masyarakat dalam kasus penolakan pembangunan Gereja HKBP Filadelfia di Kabupaten Bekasi dan Gereja Katolik Santa Clara di Kota Bekasi. Disebutkan oleh Theda Skocpol, negara bersifat otonom dan negara memiliki instrumen-instrumen untuk mencapai tujuannya. Metode yang digunakan dalam penelitian ini adalah kualitatif deskriptif. Adapun teknik pengumpulan data yang digunakan dalam penelitian ini adalah dengan wawancara dan studi dokumen. Hasil penelitian menunjukkan bahwa perbedaan standpoint dalam penanganan konflik di dua kasus tersebut memengaruhi proses penyelesaian konflik sekaligus menguji otonomi negara. Dalam kasus Gereja HKBP Filadelfia, peran "civil society" melalui kelompok kepentingan (interest groups) yang menolak pembangunan gereja memberi kontribusi negatif pada penyelesaian konflik karena berhasil menaklukkan otoritas politik demokratis, yaitu negara yang direpresentasikan oleh Pemda Kabupaten Bekasi.

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The Indonesian Constitution guarantees the independence of every citizen in embracing and worshiping according to their religion and beliefs. However, decades since the independence of the Republic of Indonesia, conflicts due to the construction of houses of worship are still common. Some cases show that minorities in majority areas of different religions experience obstacles in establishing a hous of worship. The purpose of this research is to find out how the state plays a role in the ongoing conflict in society with two case studies, namely the rejection of the establishment of the Filadelfia HKBP Church in Bekasi Regency and the Santa Clara Catholic Church in Bekasi City. As stated by Theda Skocpol, the state is autonomous and the state has instruments to achieve its own goals. The method used in this research is qualitative method. The data collection techniques used in this research are interviews, and documentary studies. The results showed that the standpoint differences in conflict resolution in the two cases affected the conflict resolution process and at the same time tested state autonomy. In the case of the HKBP Filadelfia Church, the role of "civil society" through interest groups who refused the church's construction contributed negatively to conflict resolution because it succeeded in conquering democratic political authority, namely the State represented by the Bekasi Regency local government."